Mitsubishi CM300DU-24NFH Dual Half-Bridge IGBT Module

The Mitsubishi CM300DU-24NFH (CM300DU-24NFH) is a dual half-bridge insulated-gate bipolar transistor (IGBT) power module designed for high-efficiency power switching in industrial automation systems. Engineered for demanding electrical environments, this robust power assembly contains two insulated-gate bipolar transistors arranged in a half-bridge circuit, making it suitable for motor drive inverters, switching power supplies, uninterruptible power supplies, and general high-power conversion equipment. The module provides a rated collector current of 300 A and a maximum collector-emitter voltage rating of 1.2 kV (1200 V). Capable of handling high-power operations, the unit supports a power dissipation capacity of up to 1.13 kW and operates reliably up to a maximum junction temperature of 150 degrees Celsius. Its integrated half-bridge topology simplifies inverter stage designs by housing both upper and lower switching devices within a single compact module package. With high electrical isolation and dependable thermal management capabilities, this Mitsubishi IGBT module delivers consistent performance and fast switching characteristics. The CM300DU-24NFH serves as a direct replacement component for maintaining and restoring the switching stages of compatible industrial power converters, frequency drives, and automation machinery.